0.3~8 GHz超十倍频程MMIC低噪声放大器设计

Design of 0.3-8 GHz over decade octave MMIC low noise amplifier

为应对未来射电天文发展对超过十倍频程带宽接收性能的需求,实现厘米波多波段同时观测,使用法国OMMIC公司70 nm GaAs mHEMT工艺研究并设计一款工作频率为0.3~8 GHz的超宽带单片微波集成低噪声放大器芯片。放大器电路采用三级级联放大结构,双电源供电,芯片尺寸为2000μm×1000μm。仿真结果显示,常温下芯片在整个工作频段内增益大于40 dB,噪声温度优于65 K,在8 GHz处达到最低噪声51.4 K,无条件稳定。该芯片工作频率覆盖P,L,S,C,X五个传统天文观测频段,适用于厘米波段的超宽带接收机前端,并满足未来毫米波拓展中频带宽的需求。

In order to cope with the future development of radio astronomy for the reception performance of more than ten octave bandwidth,and realize multi-band simultaneous observation in the centimeter band,a 0.3-8 GHz ultra-wideband MMIC(Monolithic Microwave Integrate Circuits)low noise amplifier chip was designed using 70 nm GaAs mHEMT process of the French OMMIC company.The amplifier circuit adopted a three-stage cascade structure and dual power supply.The chip size is 2000μm×1000μm.The simulation results show that at room temperature,the chip gain is higher than 40 dB in the entire operating frequency band,the noise temperature is lower than 65 K,and the lowest noise is 51.4 K at 8 GHz.The circuit is unconditional stable.The operating frequency of the chip covers five traditional astronomical observation frequency bands:P,L,S,C and X.It is suitable for the front end of the ultra-wideband receiver in the centimeter wave band,and meets the needs of the future millimeter wave to expand the intermediate frequency bandwidth.