摘要
基于InGap/GaAs HBT工艺设计了一款宽带无源双平衡混频器,针对双平衡混频器射频中频交叠及射频到中频端口隔离度差的问题,采用了双混频环+新型滤波补偿网络的结构,不仅提高了隔离度和线性度,同时扩宽了带宽,改善了混频器整体性能。射频、本振频率为1.5~5.0 GHz,射频功率为-10 dBm,本振功率为13 dBm,中频频率为DC~1.5 GHz。仿真结果表明,变频损耗(Conversion Loss)为7 dB,本振与射频信号隔离度(Iso_LO/RF)为44 dB,本振与中频信号隔离度(Iso_LO/IF)为45 dB,射频与中频信号隔离度(Iso_RF/IF)为35 dB,IIP3为20 dBm,芯片面积为1.6 mm×1.6 mm。
A broadband passive double-balanced mixer was designed based on the InGap/GaAs HBT process.Aiming at the problem of RF to IF ports overlap and poor isolation from the double-balanced mixer,the structure of double mixing loop plus new filter compensation network was adopted,which not only improves the isolation and linearity,but also broadens the bandwidth,leading to the improvement of the overall performance of the mixer.RF and LO frequency is 1.5-5.0 GHz,RF power is-10 dBm,LO power is 13 dBm and IF frequency is DC-1.5 GHz.The simulation results show that the conversion loss is 7 dB,the signal of LO to RF isolation(Iso_LO/RF)is 44 dB,the signal of LO to IF isolation(Iso_LO/IF)is 45 dB,the signal of RF to IF isolation(Iso_RF/IF)is 35 dB,the input third-order intermodulation point is 18 dBm and the chip area is 1.6 mm×1.6 mm.
作者
张博
黄晴
吴昊谦
ZHANG Bo;HUANG Qing;WU Haoqian(School of Electronic Engineering,Xian University of Posts and Telecommunications,Xian710121,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2022年第4期423-428,共6页
Electronic Components And Materials
基金
陕西省重点研发计划项目(2018ZDXM-GY-010,2017ZDXM-GY-004,2016KTCQ01-08)
西安市集成电路重大专项(201809174CY3JC16)
陕西省创新人才推进计划-科技创新团队(2020TD-019)
陕西省教育厅重点科学研究(20JY059)。
关键词
砷化镓
双平衡结构
滤波补偿网络
双混频环
隔离度
线性度
GaAs
double-balanced structure
filter compensation network
double-mixing ring
isolation
linearity