基于碳化硅MOSFET功率模块的牵引变流器电磁兼容应用研究

Research on EMC Application of Traction Inverter Based on Silicon Carbide MOSFET Power Module

宽禁带器件已逐渐可以满足高压、大功率的应用场合,其中碳化硅MOSFET功率模块因具备开关速度快、损耗小及高热导率的特性,已逐渐在铁路行业推广应用。使用碳化硅MOSFET功率模块代替传统的IGBT功率模块,可降低牵引变流器的体积和质量,从而实现更高的功率密度。文章中通过对碳化硅MOSFET功率模块的模型进行分析,着重解决其在高功率运行过程中产生的电磁干扰问题,为碳化硅MOSFET功率模块的广泛应用提供理论及实践依据。

Wide band gap devices can gradually meet the applications of high voltage and high power.Silicon carbide MOSFET power module has been gradually popularized and applied in the railway industry because of its characteristics of fast switching speed,low loss and high thermal conductivity.Using silicon carbide MOSFET power module instead of traditional IGBT power device can reduce the volume and weight of traction converter,so as to achieve higher power density.By analyzing the model of silicon carbide MOSFET power module,this paper focuses on solving the electromagnetic interference(EMI) problem of silicon carbide power module in the process of high-power operation,so as to provide theoretical and practical basis for the wide application of silicon carbide MOSFET power module.