一种新型异质结双栅隧穿场效应晶体管

A Novel Heterojunction Double-gate Tunneling Field Effect Transistor

文章提出一种新型Si/Ge异质结双栅隧穿场效应晶体管(GP_Si/Ge_DGTFET)。该器件在异质结的基础上加入凹槽型pocket结构,禁带宽度较窄的Ge材料可以使器件拥有更低的亚阈值摆幅和更大的开态电流,同时pocket结构的引入可以进一步降低隧穿势垒。基于Sentaurus TCAD仿真软件,将该新型器件与传统Si/Ge异质结双栅隧穿场效应晶体管(Si/Ge_DGTFET)进行对比。仿真结果表明,该新器件拥有更好的亚阈值摆幅和开关特性,其开态电流为6.0×10^(-5) A/μm,关态电流约为10^(-14) A/μm,平均亚阈值摆幅达到35.36 mV/dec。

A novel Si/Ge heterojunction double-gate tunneling field effect transistor(GP_Si/Ge_DGTFET)was proposed.Based on the heterojunction,a grooved pocket structure is added to the device.Ge material with a narrow band gap can make the device have a lower subthreshold swing and a larger open state current,and the introduction of pocket structure can further reduce the tunneling barrier.Based on Sentaurus TCAD simulation software,the new device was compared with a conventional Si/Geheterojunction double-gate tunnelling field effect transistor(Si/GE_DGTFET).The simulation results show that the new device has better switching characteristics and sub-threshold characteristics.Its open state current is 6.0×10^(-5) A/μm,the off-state current is approximately 10^(-14) A/μm,average subthreshold swingis reached 35.36 mV/dec.