高效线性氮化镓射频功放芯片模组研究

Research on High Efficiency Linear Gallium Nitride RF Power Amplifier Chip Module

设计了一款基于相位失配的高线性度Doherty功率放大器(DPA),通过调节输出和输入相位失配网络,改善DPA的幅度-相位(AM-PM)特性并兼顾回退和饱和性能,并基于0.25μm Ga N HEMT工艺,设计了一款全集成DPA来验证上述方法。实测结果显示,在6.3 GHz处,AM-PM<2°,AM-AM<0.3 d B,饱和功率为41.1 d Bm,6 d B回退漏极效率为45%,使用峰均比(PAPR)为7.8 d B的100 MHz调制信号,在33 d Bm处,邻信道功率泄漏比(ACPR)<-43.6 d Bc。

This article represent a high linearity doherty power amplifier(DPA)based on phase mismatch.When properly tuning the input and ouput phase mismatch network,the amplitude-to-phase(AM-PM)characteristic of the whole doherty will be compensated while maintaining reasonable back-off and saturated performances.In this paper,based on 0.25μm Ga N HEMT process,a fully integrated DPA is designed to verify the above methods.The measured results show that at 6.3 GHz,AM-PM is better than 2°,AM-AM is better than 0.3 d B,the saturation power is 41.1 d Bm,and the 6 d B back-off drain efficiency is 45%.100 MHz modulated signal with peak-to-average ratio(PAPR)of 7.8 d B is used.The adjacent channel power leakage ratio(ACPR)is better than-43.6 d Bc at 33 d Bm.