摘要
现代发射系统对功率放大器的工作频带和功率等级提出了越来越高的要求,而基于新型GaN功率器件的功放设计可以满足这些新的需求。采用GaN HEMT进行基本功放单元设计,并创新性地采用非对称结构的5路径向功率合成器实现整机所需功率同时提高整机效率。该功率放大器工作频率为1.65~3 GHz,实测输出功率大于500 W (CW),电源转换效率大于25%,较同类产品在效率体积等指标上有较大提升。该产品适用于高功率系统应用,如EMC测试、电子对抗等。
Modern transmission systems have put forward higher and higher requirements for the working frequency band and power level of power amplifiers,and the design of power amplifiers based on GaN power devices can meet these new requirements.In this paper,GaN HEMT is used to design the basic power amplifier unit,and the 5-path power synthesizer with asymmetric structure is innovatively used to realize the required power of the whole machine and improve the efficiency of the whole machine.The operating frequency of the power amplifier is 1.65~3 GHz,the measured output power is greater than 500 W(CW),and the power conversion efficiency is greater than 25%.Compared with similar products,the efficiency and volume index have been greatly improved.This product is suitable for high-power system applications,such as EMC testing,electronic countermeasures,etc.
作者
薛新
董亮
吴佳倩
Xue Xin;Dong Liang;Wu Jiaqian(No.36 Research Institute of CETC,Jiaxing 314033,China)
出处
《电子技术应用》
2022年第4期113-116,共4页
Application of Electronic Technique
关键词
GaN功率管
高功率
高效率
GaN power device
high power
high efficiency
