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2560×2048元短波红外InGaAs焦平面探测器(特邀) 被引量:3

2 560×2 048 short-wave infrared InGaAs focal plane detector (Invited)
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摘要 高性能大规模小像元短波红外InGaAs焦平面探测器是新一代航天遥感仪器向高空间分辨率、高能量分辨率、高时间分辨率发展需要的核心器件。文中报道了高密度InGaAs探测器阵列设计与制备,并与匹配的Si-CMOS读出电路倒焊互连形成焦平面的最新研究进展,重点突破了高密度小像素探测器的暗电流和噪声抑制、百万像素焦平面倒焊互连等关键技术,解决了高平整度芯片面形控制、In柱凸点形貌和高度一致性控制、高密度倒焊偏移控制等倒焊新工艺,研制了像元中心距10μm的2 560×2 048元焦平面探测器,其峰值探测率优于1.0×10^(13)cm·Hz^(1/2)/W,响应不均匀性优于3%,有效像元率优于99.7%,动态范围优于120 dB。采用该焦平面进行了实验室演示成像,图片清晰。 The new generation of aerospace remote sensing instruments are developing towards high spatial resolution, high energy resolution, and high time resolution. Its core components are high-performance large-scale small-pixel short-wave infrared InGaAs focal plane detectors. The latest research progress in the design and fabrication of high-density InGaAs detector arrays was reported, and hybrided with matching Si-CMOS readout circuits to form a focal plane. The breakthroughs in dark current and noise suppression of high-density small-pixel detectors, megapixel focal plane flip chip interconnection and other key technologies were focused. The new flip chip interconnection technologies such as high flatness chip surface shape control, indium bumps convex morphology and high consistency control, and high-density flip chip interconnection control were solved.Developed 10 μm pitch 2 560×2 048 focal plane detectors, which D* was better than 1.0×10^(13)cm·Hz^(1/2)/W, the response non-uniformity was better than 3%, the effective pixel rate was better than 99.7%, and the dynamic range was better than 120 dB. This focal plane was used for laboratory demonstration imaging, and the picture was clear.
作者 于春蕾 龚海梅 李雪 黄松垒 杨波 朱宪亮 邵秀梅 李淘 顾溢 Yu Chunlei;Gong Haimei;Li Xue;Huang Songlei;Yang Bo;Zhu Xianliang;Shao Xiumei;Li Tao;Gu Yi(State Key Laboratory of Sensor Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Devices,Chinese Academy of Sciences,Shanghai 200083,China)
出处 《红外与激光工程》 EI CSCD 北大核心 2022年第3期1-10,共10页 Infrared and Laser Engineering
关键词 INGAAS 焦平面 短波红外 探测率 暗电流 InGaAs focal plane short-wave infrared detectivity dark current
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