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GaN基LED芯片抗湿性能提升研究 被引量:1

Research on improvement of moisture resistance of GaN-based LED chip
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摘要 吸湿失效是影响LED可靠性的一个重要问题。从LED芯片结构着手,在蒸镀钝化层之前在芯片切割走道边缘处镀12 nm厚度的TiO_(2),宽度分别是5μm和8μm,其目的是为了增强与SiO(2)钝化层的黏附性,同时减少切割带来的钝化层损坏。通过逆电解测试与高温高湿老化测试,测试结果均表明蒸镀TiO_(2)薄膜可以提高LED抗湿性能。 Hygroscopic failure is an important problem affecting LED reliability.Starting from the structure of LED chip,TiO_(2)with 12 nm thickness was plated at the edge of chip cutting aisle with widths of 5μm and 8μm respectively before the passivation layer was vapor plated.The purpose was to enhance the adhesion with SiO_(2)passivation layer and reduce the damage of passivation layer caused by cutting.Through reverse electrolysis test and high temperature and high humidity aging test,the test results show that TiO_(2)film evaporation can improve LED moisture resistance.
作者 刘春辉 许英朝 王嘉伟 周琼 林翔宇 王明明 吴盼盼 LIU Chunhut;XU Yingchao;WANG Jiawei;ZHOU Qiong;LIN Xiangyu;WANG Mingming;WU Panpan(School of Optoelectronics and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China;Fujian Provincial Key Laboratory of Optoelectronic Technology and Deuices.Xiamen University of Technology,Xiamen 361024,China)
出处 《激光杂志》 CAS 北大核心 2022年第3期38-41,共4页 Laser Journal
基金 厦门市科技计划重大项目(No.3502ZCQ20191002) 厦门市科技计划项目(No.3502Z20183060) 福建省自然科学基金面上项目(No.2019J01876)。
关键词 LED 抗湿性能 逆电解 高温高湿老化 TiO_(2) LED moisture resistance inverse electrolysis high temperature and high humidity aging TiO_(2)
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