石墨烯的化学掺杂

Chemical doping of graphene

石墨烯作为一种单层碳原子纳米材料,其平面内碳原子以sp^(2)电子轨道杂化形成二维蜂窝状晶体结构,厚度仅有0.34 nm,具备优异的光电性能,然而由于石墨烯的带隙为零,限制了其在电子领域的应用。化学掺杂是调制石墨烯电学和物理特性的重要手段。了解不同类型的化学掺杂机制对于提高石墨烯的电学和光学性能,推动其实际应用具有重要意义。围绕替代掺杂与吸附掺杂2个方面综述了近年来石墨烯化学掺杂的研究现状。根据掺杂剂的性质,重点介绍了几种典型的n型和p型掺杂剂及其掺杂机理。除了替代掺杂和吸附掺杂之外,还介绍了一些其他化学掺杂。最后,根据化学掺杂研究面临的主要挑战,对其未来的发展进行了展望。

Graphene is a single-atom-layer carbon nanomaterial,its in-plane carbon atoms are hybridized with sp^(2) electron orbits to form a two-dimensional honeycomb crystal structure with a thickness of only 0.34 nm and excellent photoelectric properties.However,the band gap value of the graphene is zero,which limits its application in the electronics domain.Chemical doping is a key means of modulating the electrical and physical properties of graphene.The interpretation of different kinds of chemical doping mechanisms is of great importance for improving the electrical and optical properties of graphene,and thus broadens its practical application.This paper summarizes the state of graphene chemical doping research in recent years,concentrating on substitution doping and adsorption doping.According to the properties of dopants,several typical n-type and p-type dopants and their doping mechanisms are introduced.Further,other chemical doping is also introduced.Finally,based on the key challenges of chemical doping research,its future development has been canvassed.