采用滤波结构的28nm触发器抗单粒子翻转研究

28nm Flip-Flops Hardened Against Single Event Upset of With Filter Structure

基于28 nm体硅CMOS工艺,设计了双路滤波的触发器(flip-flop,FF)结构,在传统的双互锁存(dual interlocked cell,DICE)加固基础上,对数据、时钟及复位信号均引入双路滤波结构。为研究不同滤波宽度的加固效果,设计了不同的滤波梯度。试验结果表明:当LET值为13.1 MeV·cm^(2)·mg^(-1)的Cl离子和LET值为37.3 MeV·cm^(2)·mg^(-1)的Ge离子分别辐射时,对该加固触发器电路分别以不同滤波宽度对SET进行滤波,可完全抑制SEU,且滤波宽度越大,加固效果越显著。

Based on the 28 nm bulk silicon CMOS process,a flip-flop(FF)with dual-path filter is designed in this paper.Based on the traditional dual interlocked cell(DICE)hardening,FF introduces a dual filter structure for data,clock,and reset signals.Different filter gradients are designed to study the hardened effect of different filter widths.The test results show that when the heavy ions of Cl and Ge with LET values of 13.1 and 37.3 MeV·cm^(2)·mg^(-1),are respectively used for the test,the hardened FF circuit filters the single event transient effect(SET)with different filter widths,which can realize the complete suppression of single event upset(SEU).The larger the filter width is,the more effective the hardened effect is.