驱动能力及结构特征影响反相器单粒子效应敏感性的仿真研究

Simulation of the Sensitivity of Inverters With Different Driving Capacity and Structural Characteristics to Single Event Effect

基于一种综合考虑有源区形状尺寸、重离子轰击位置、电路响应反馈、双极放大电荷收集等因素的电路级单粒子效应仿真方法,开展了180 nm工艺下不同驱动能力反相器的单粒子效应敏感性研究。研究结果表明:当驱动能力增至一定倍数,反相器的单粒子敏感截面与版图面积比及瞬态脉冲宽度会明显下降;含有多个子模块的反相器单元中,驱动能力高的子模块较驱动能力低的子模块具有更强的抗单粒子能力;在版图结构设计中共漏极连接方式有利于降低敏感区域面积,采用共漏极连接方式较共源极、独立源漏连接方式更利于降低电路对单粒子效应的敏感性。

The single event effect(SEE)sensitivities of seven inverters(INV1,INV2,INV4,INV8,INV12,INV16,INV20)fabricated by 180 nm process D flip-flop with different driving capacities are simulated based on a circuit-level SEE approach.The SEEs of single event transient sensitive area,pulse width distribution,driving capacity,and structural characteristics on the sensitivity of inverters with different driving capacities are compared.The results show that when the driving capacity increases to a certain multiple,the ratio of single event effect sensitive section to layout area and SEE transient pulse width of the inverter will decrease significantly.For the inverter unit with multiple sub modules,the sub module with high driving capacity has stronger anti SEE ability than the sub module with low driving capacity.For the circuit layout structure design,the common drain connection strategy of internal transistor helps to reduce the sensitive area of the inverter,so the common drain connection is more conducive to reduce the sensitivity of the circuit to SEE than the common source strategy and independent source drain connection strategy.