嵌入MEMS微流道的硅转接基板键合工艺研究

Research on Bonding Process of Silicon Interposer Substrate Embedded in MEMS Micro-channel

以嵌入MEMS微流道的硅转接基板为研究对象,对影响微流道结构键合的回流工艺参数进行了研究,解决了微流道结构键合强度等问题。其中,探讨了助焊剂或RF等离子、回流时间、回流炉温区个数和压力等因素对回流后微流道结构性能的影响。研究表明:对待回流样件进行RF等离子处理,并在盖板上施加0.22N压力后,采用100s回流时间;在10温区的回流炉中完成回流后,其焊接质量达到最优,平均焊接强度值为14.83kg;并且边缘焊接完整,可以满足微流道结构完全密封的要求,因而不会发生液体泄漏、微流道结构变形和堵塞等问题。

Taking the silicon transfer substrate embedded in the MEMS microchannel as the research object,the reflow process parameters that affect the bonding of the micro-channel structure are studied,and the problems of the bonding strength of the micro-channel structure are solved.The effects of flux or RF plasma,reflow time,number of temperature zones in the reflow oven,pressure and other factors on the performance of micro-channels structure after reflow are discussed.The results show that after the reflux sample is treated by the RF plasma method,after 0.22 N pressure is applied on the cover plate and 100 s reflux time is adopted to complete reflux in reflux furnace at 10 temperature zone,the welding quality reaches the best,and the average welding strength value is 14.83 kg,and the edge welding is complete,which can meet the requirements of complete sealing of the micro-channel structure,so there will be no problems such as liquid leakage,deformation and blockage of micro-channel structure.