ZnO纳米棒阵列的光敏忆阻开关特性

Photoresistive switching characteristics of ZnO nanorods array

通过水热法成功合成取向生长的氧化锌纳米棒阵列,并制备了Cu/ZnO NRs/Zn结构的忆阻器件.研究结果表明,基于氧化锌纳米棒阵列的忆阻器表现出良好的双极阻变行为,并在光辐照下,有响应电流增大的光电协同刺激响应性,阻变机制为由空间电荷限制电流(SCLC)主导的电子型阻变机制.该工作为开发具有光电操作的人工神经突触器件和神经网络计算提供了一种经济有效的方法.

A Cu/ZnO NRs/Zn memristor device was prepared by hydrothermal method with ZnO nanorods.The results show that the memristor based on ZnO nanorods array has a good bipolar resistance behavior,and has the cooperative response of photoelectric stimulus to increase the current under light irradiation.The resistance mechanism is dominated by space charge limited current(SCLC)and electronic resistance.This work provides a cost-effective method for the development of artificial synaptic devices,neural networks and computers with photoelectric manipulation.