摘要
表征了MoS_(2(1-x))Se_(2x)样品的Raman光谱和光致发光(PL)谱性质,验证了MoS_(2(1-x))Se_(2x)基于组分和厚度的带隙可调特性,并基于Raman光谱分析了单层及多层样品由于引入Se原子引起的结构变化及光谱特性。此外,受益于单层材料的直接带隙的电子结构,在405 nm激光波长、112.1μW/cm^(2)功率密度光照和0.5 V偏压的条件下,单层MoS_(2(1-x))Se_(2x)光电探测器响应度最大约为29 A/W,探测率超过4.0×10^(10) Jones,电流开关比约为10^(2)。单层MoS_(2(1-x))Se_(2x)光电晶体管展示出的优异光电探测性能显示出其在未来光电领域的巨大潜力。
The properties of Raman spectra and photoluminescence(PL)spectra of MoS_(2(1-x))Se_(2x) samples were characterized,and the tunable characteristics of the band gap of MoS_(2(1-x))Se_(2x) based on composition and thickness were verified.And based on the Raman spectra,the struc-tural changes and spectral characteristics of monolayer and multi-layer samples due to the introduction of Se atoms were analyzed.In addition,benefiting from the electronic structure of the direct band gap for the monolayer material,under the conditions of 405 nm laser wavelength,112.1μW/cm^(2) power density illumination and 0.5 V bias voltage,the monolayer MoS_(2(1-x))Se_(2x) photodetector exhibits the maximum responsivity of about 29 A/W,the detectivity of over 4.0×10^(10) Jones,and the current on-off ratio of about 10^(2).The excellent photodetection performance of the monolayer MoS_(2(1-x))Se_(2x) phototransistor shows its great potential in future optoelectronic field.
作者
钱程
巫君杰
李潇
徐浩
Qian Cheng;Wu Junjie;Li Xiao;Xu Hao(School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China;School of Electronic&Information Engineering,Wuxi University,Wuxi 214105,China;Department of Electronic and Electrical Engineering,University College London,London WC1E 6BT,UK;School of Physics,University of Electronic Science and Technology of China,Chengdu 611731,China)
出处
《微纳电子技术》
CAS
北大核心
2022年第4期306-311,347,共7页
Micronanoelectronic Technology
基金
江苏省高等学校自然科学研究面上项目(20KJB510007)。
