期刊文献+

球磨参数对铜铟镓硒(CIGS)靶材粉料的影响 被引量:4

Influence of ball milling parameters on CIGS target powder
原文传递
导出
摘要 采用不同球磨参数对CIGS靶材的Cu_(2)Se、In_(2)Se_(3)和Ga_(2)Se_(3)原始粉料进行球磨混合,通过标准筛筛分法和FESEM研究分析球磨时间、球料液配比对球磨后的CIGS靶材粉料的粒径和显微形貌的影响。结果表明:随着球磨时间的增加,球磨粉料的300目筛过筛率先增加后减小;而球料液配比的变化对球磨粉料的筛分过筛率的影响没有规律性。球磨1 h和2 h时,球磨粉料团聚较少,粉料颗粒基本呈片状结构;球磨2 h时,球磨粉料粒径大小比较均匀;球磨4 h时,球磨粉料团聚现象明显。 The Cu_(2)Se、In_(2)Se_(3)和Ga_(2)Se_(3)raw powders of CIGS target were mixed by ball milling with different ball milling parameters.The effects of ball milling time and ball-powder-liquid ratio on particle size and microstructure of CIGS milled powders were studied by screening method of standard sieve and FESEM.The results show that with the increase of ball milling time,the leaking percentage of the sieve bottom of milled powders increases first and then decreases.However,the change of ball-powder-liquid ratio has no regular effect on the leaking percentage of the sieve bottom of milled powders.When the ball milling times are 1 h and 2 h,the agglomeration of milled powders is less,and the powders particles are basically flake structure.At 2 h of ball milling time,the particle size of milled powders is uniform.When the ball milling time is 4 h,the agglomeration phenomenon of milled powders is obvious.
作者 陈英伟 邵玲 CHEN Yingwei;SHAO Ling(Research Institute of Zhejiang-University-Taizhou,Laboratory for the Application Technology of New Materials of Strong Electricity,Taizhou 318000,China)
出处 《粉末冶金工业》 CAS 北大核心 2022年第2期110-113,共4页 Powder Metallurgy Industry
基金 浙江省公益技术应用研究资助项目(No.LGC20E010003)。
关键词 铜铟镓硒 球磨参数 粉料粒径 显微形貌 Cu(InxGa1-x)Se2 ball milling parameter powder particle size microstructure
  • 相关文献

参考文献8

二级参考文献51

  • 1郭杏元,许生,曾鹏举,范垂祯.CIGS薄膜太阳能电池吸收层制备工艺综述[J].真空与低温,2008,14(3):125-133. 被引量:21
  • 2杨基南.太阳能电池产业的现状和发展[J].微细加工技术,2005(2):1-4. 被引量:10
  • 3刘芳芳,何青,李凤岩,敖建平,孙国忠,周志强,孙云.Cu(In,Ga)Se_2材料成分对其电池性能的影响[J].Journal of Semiconductors,2005,26(10):1954-1958. 被引量:14
  • 4敖建平,孙云,王晓玲,李凤岩,何青,孙国忠,周志强,李长健.共蒸发三步法制备CIGS薄膜的性质[J].Journal of Semiconductors,2006,27(8):1406-1411. 被引量:11
  • 5Repins I, Contreras M A, Egaas B,et al. 19.9G efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2G fill factor [J] Progress in Photovoltaics : Research and Applica- tions,2008,16(3) :235 239.
  • 6Jackson P, Hariskos D, Lotter E,et al. New world record efficiency for Cu (In, Ga) Se2 thin-film solar cells beyond 20G [J]. Progress in Photovoltaics: Research and Appli- cations,2011,19: 894 897.
  • 7Lammer M, Kniese R, Powalla M. Iwline deposited Cu (In,Ga) Sez solar cells: influence of deposition tempera ture and Na co-evaporation on carrier collection [J]. Thin Solid Films,2004,451:175 178.
  • 8Chang Jen-Chuan, Chuang Chia-Chih, Guo Jhe-Wei,et al. An investigation of CuInGaSe2 thin film solar cells by using CuInGa precursor [J]. Nanoscience and Nanotechn- ology Letters, 2011,3 : 200-203.
  • 9Bhattacharya R N, Oh M K, Kim Y. CIGS based solar cells prepared from electrodeposited precursor films [J]. Solar Energy Materials ga Solar Cells, 2012,98 : 198 202.
  • 10Uhl A R, Romanynk Y E, Tiwari A N. Thin film Cu(In, Ga) Se2 solar cells processed from solution pastes with polymethyl methacrylate binder [J]. Thin Solid Films, 2011,519(21) :7259-7263.

共引文献22

同被引文献66

引证文献4

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部