GaN HEMT E/F3类功率放大器温度可靠性研究

Temperature reliability of GaN HEMT E/F3 power amplifier

为了研究温度对开关类功率放大器可靠性的影响,对GaN HEMT E/F3类功率放大器开展了一系列的温度可靠性测试。测试表明,该E/F3类功率放大器在-20~120℃范围内都工作在高效模式。随着温度的升高,其直流特性、S参数以及射频输出特性均呈现不同程度的下降。同时,电路本身及其寄生元件所消耗的能量也随之增加。因此,温度变化对E/F3类功率放大器的性能带来了显著的影响。为了扼制温度升高导致该GaN HEMT E/F3类功率放大器的退化,文中提出提高衬底掺杂浓度、减小漏源结面积、选择合适的栅极宽度以及设计合理的温度补偿电路等措施提升电路性能,该研究为E/F3开关类功率放大器的可靠性设计研究提供了重要的参考。

In order to study the temperature effect for the reliability of GaN HEMT E/F3 power amplifiers(PAs),a series temperature reliability tests are carried out.The test results show that the PA can operate in a highly efficient mode in the temperature ranges from-20℃—120℃.As the temperature rises,the DC characteristic,sparameters and RF output characteristic of the PA all show certain reduction.Meanwhile,the energy consumption of the circuit and its parasitic elements increases.Our tests demonstrate that temperature can significantly impact the performance of the GaN HEMT E/F3 PAs.And some strategies are proposed to improve the reliability of this kind of PAs,including increasing the substrate􀆳s doping concentration,reducing the leakage junction areas,choosing the proper gate width and developing the appropriate temperature compensation circuit.This research provides important guidance for the design of class E/F3 PAs.