薄膜铌酸锂光波导ICP刻蚀工艺研究
摘要
本文对刻蚀用掩膜、气体,以及气体总流量、ICP/RIE功率、反应室压力等工艺参数对刻蚀速率、刻蚀面粗糙度、脊波导侧壁角度的影响进行了研究,制备出粗糙度RMS值为1.90nm,深度为349nm,侧壁角度为75°的LNOI脊型波导。
出处
《电子技术与软件工程》
2022年第5期109-112,共4页
ELECTRONIC TECHNOLOGY & SOFTWARE ENGINEERING
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