激光辅助MicroLED巨量转移技术进展

Advances in laser-assisted mass transfer of MicroLED

巨量转移是将几百万甚至上千万颗微米尺度的MicroLED芯片从源基板精准转移到显示基板上的制造技术,在转移良率、精度和速率等方面存在诸多挑战,成为制约新一代显示产品的技术瓶颈.基于激光-材料界面的相互作用已经发展了多种激光辅助转移技术,该种技术具有对器件损伤小、高度可选择性、响应快速高效等优势,目前成为极具潜力的巨量转移解决方案.本文首先介绍了巨量转移目前的技术实现方式和技术难点,随后评述了基于激光辅助的超薄微器件转移技术的最新进展,包括激光辅助的基本原理、转移工艺过程和目前达到的技术水平,最后探讨了在MicroLED芯片巨量转移领域的发展前景及挑战.

Mass transfer is a key technology for accurately transferring tens of millions of micrometer-scale MicroLED from the source substrate to the donor substrate.Major challenges,including transfer yield,transfer accuracy,and transfer efficiency,have impeded the manufacture of MicroLED displays.Various laser-assisted transfer technologies have been developed based on the interaction of the laser-material interface.These technologies have become an excellent transfer solution with significant potential owing to their advantages of minimal device damage,high selectivity,and fast as well as efficient response.This article first introduces current technologies,difficulties,and challenges of mass transfer,and further reviews the latest developments review laser-assisted transfer technologies ultrathin microdevices,including the basic principles of laser interaction,transfer process,and currently attained level.Finally,the prospects and challenges of mass transfer for different MicroLED applications are discussed.