摘要
随着电力电子向高功率、大电流、高能量密度的方向快速发展,市场对于更高可靠性的氮化硅陶瓷覆铜基板的需求越来越迫切。界面空洞率是衡量AMB陶瓷覆铜基板性能的重要指标之一。采用AgCuTi活性焊膏作为钎料,研究了预脱脂工艺和不同钎焊压力对氮化硅陶瓷覆铜基板界面空洞率的影响。结果表明,采用预脱脂工艺能显著降低界面空洞率,在预脱脂且施加400 N钎焊压力的工艺条件下,界面空洞率近乎为0,界面剥离强度可达17.3 N/mm。
With the rapid development of power electronics towards high power,high current and high energy density,the market demand for the copper-bonded Si_(3)N_(4)substrates with higher reliability is more and more urgent.The interface void ratio is one of the important indexes to measure the performance of AMB copper-bonded ceramic substrates.AgCuTi active brazing paste is used as the solder to study the effects of pre-debinding process and different brazing pressures on the interface void ratio of copper-bonded Si_(3)N_(4)substrates.The results show that the interfacial void ratio can be significantly reduced by the pre-debinding process.Under the process condition of pre-debinding and applying 400 N brazing pressure,the interfacial void ratio is almost 0,and the interfacial peel strength can reach 17.3 N/mm.
作者
李伸虎
李文涛
陈卫民
王捷
吴懿平
LI Shenhu;LI Wentao;CHEN Weiming;WANG Jie;WU Yiping(Huazhong University of Science and Technology,Wuhan 430074,China;Guangzhou XianYi Electronics Technology Co.,Ltd.,Guangzhou 510000,China)
出处
《电子工艺技术》
2022年第3期125-127,138,共4页
Electronics Process Technology
