黑硅光电探测材料与器件研究进展

Research Progress of Black Silicon Photoelectric Detection Materials and Devices

黑硅作为一种新型光电材料,在光伏太阳能电池、光电探测器、CMOS图像传感器等领域被广泛研究,其中黑硅的光电探测技术备受关注,近些年来也取得了重要的研究进展。本文首先简单介绍了黑硅材料的结构,然后讨论了基于飞秒激光刻蚀法、湿法腐蚀、反应离子刻蚀法等方法制备的黑硅材料的性质。其次概述了基于以上方法制备的不同黑硅光电探测器的结构及性能,并讨论了黑硅器件在不同领域的应用。最后对黑硅光电探测技术进行了分析与展望,探讨了黑硅材料及器件未来的发展方向。

As a new photoelectric material,black silicon has been widely studied in photovoltaic solar cells,photodetectors,CMOS image sensors and other fields.Among them,the photoelectric detection technology of black silicon has attracted much attention,and important research progress has been made in recent years.In this review,the structure of black silicon materials has been firstly introduced,then the properties of black silicon materials prepared by femtosecond laser etching,wet etching and reactive ion etching are briefly discussed.Secondly,the structure and performance of different black silicon photodetectors based on the above preparation methods are summarized,then the application of black silicon devices in different fields is discussed.Finally,the photoelectric detection technology of black silicon is analyzed and prospected,and the future development direction of black silicon materials and devices is discussed.