基于无掩模定域性电沉积的3D打印平面微结构工艺研究

Research on 3D printing planar microstructure process based on maskless localized electrodeposition

平面微结构在偏振光栅、表面增强拉曼散射(Surface Enhanced Raman Scattering, SERS)等方面有着广泛的应用。基于无掩模定域性电沉积技术,采用尖锥状探针式微型阳极逐层扫描的方式,打印简单金属平面微结构;分别采用数字显微镜、扫描电子显微镜对平面微结构进行尺寸数据测量及微观形貌观测。研究了打印层数、电压和极间距对线条宽度及成型质量的影响规律,试验结果表明,当打印层数为80~220时,随着打印层数的增加,线条宽度保持在320μm左右,没有发生明显变化;当电压较小(<4.2 V)时,线条表面主要由粗大的胞状颗粒构成;电压增大至4.4~4.6 V时,可以打印出平滑均匀、直线度良好的线条;当电压增大至4.8 V时,线条高度方向上的均匀性变差,发生树枝晶状生长;当电压从4.2 V增大至4.8 V时,线条宽度先增大后减小;极间距从40μm增加至80μm时,线条成型质量没有发生明显变化,线条宽度在不断增大。综上所述,打印层数(>80层)并不会影响平面微结构的线条宽度,电压比极间距对平面微结构的线条宽度与成型质量有着更为显著的影响。

Planar microstructures are widely used in polarization gratings and Surface Enhanced Raman Scattering(SERS).Based on the maskless localized electrodeposition technology, the method that using a micro anode of sharp cone-shaped probe type to typescan layer by layer was used to print simple metal planar microstructures.Both digital microscope and scanning electron microscope were used to measure the size of the planar microstructure and observe the microscopic morphology.The influence laws of the number of printing layers, voltage, and interelectrode gap on the line width and forming quality were studied.Experiment results show that when the number of printing layers is 80~220,with the increase of the number of printing layers, the line width remains unchanged and is about 320 μm;when the voltage is small(<4.2 V),the surface of the line is mainly composed of thick cell-shaped particles;when the voltage increases to 4.4~4.6 V,smooth, uniform and well-straightened lines can be printed;when the voltage increases to 4.8 V,the uniformity in the height direction of the lines deteriorates, and dendritic growth occurs;when the voltage increases from 4.2 V to 4.8 V,the line width first increases and then decreases;when the interelectrode gap increases from 40 μm to 80 μm, the forming quality of the line does not change significantly and the line width continues to increase.The above results indicate that the number of printing layers(>80 layers) does not affect the line width of the planar microstructure, and the voltage has a more significant impact on the line width and forming quality of the planar microstructure than the interelectrode gap.