基于MOS管的忆阻器电路仿真器设计

The design of memristor emulator based on MOS transistor

运用互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)技术,设计了2款浮地型忆阻器电路仿真器,并研究电路仿真器在不同激励条件下的特性。理论推导表明,设计的电路仿真器的端口电压电流关系符合忆阻器与状态变量相关的欧姆定律方程。仿真结果表明,设计的忆阻器电路仿真器具有特有的捏滞回环特性,验证了其正确性和可行性。

Based on CMOS,two types of floating memristor emulators are presented in this paper.The theoretical analysis and simulation of them are carried out respectively.Theoretical analysis shows that the port voltage-current relationship of emulators conforms with the Ohm's law which is related to the state variable of the memristor.Simulation results validate the unique pinch hysteretic loop characteristics of the memristor.Through the study of circuit characteristics under different excitation conditions,the frequency and amplitude operating ranges of emulators are obtained.Hence,it verifies the correctness and the feasibility of the proposed memristor emulators.