成膜温度对二氧化硅薄膜增强DBD臭氧发生的影响

Effect of film forming temperature on the production of ozone by silicon dioxide film in dielectric barrier discharge

通过实验方法研究了二氧化硅薄膜在不同成膜温度下对DBD臭氧发生的影响。同时采用热常数分析仪、比表面积测试仪、XPS分析了负载二氧化硅介质板在不同成膜温度下的导热系数、比表面积和表面羟基。实验结果表明,成膜温度会改变薄膜的比表面积和羟基含量,从而影响二氧化硅薄膜对DBD臭氧发生的增强作用。当成膜温度变化范围为450℃~750℃时,550℃成膜温度有最大的比表面积,同时其臭氧浓度、臭氧产率及能量效率也相对最大,在放电电压7 KV时,相较于未负载二氧化硅的分别提高了9.3%,32.9%,0.086%。过高的成膜温度不利于臭氧产生,这是由于负载的二氧化硅薄膜比表面积和表面羟基含量都会大大减小。

In this paper,the effect of silica films on DBD ozone generation at different film formation temperatures was investigated experimentally.The heat transfer coefficient,specific surface area and surface hydroxyl group of the supported SiO_(2) dielectric plate at different film forming temperatures were analyzed by using thermal constant analyzer,specific surface area tester and XPS.The heat transfer coefficient,specific surface area and surface hydroxyl group of the loaded silica media plates were also analyzed at different film-forming temperatures using thermal constant analyzer,specific surface area tester and XPS.The experimental results show that the specific surface area and hydroxyl content of the films are changed by the film forming temperature,which affects the enhancement of DBD ozone generation by the SiO_(2) films.When the film temperature varies from 450℃to 750℃,the film forming temperature at 550℃has the largest specific surface area,and the ozone concentration and ozone yield are also the largest.When the discharge voltage is 7 kV,it is increased by 9.3%and 32.9%,respectively,compared with that of unsupported SiO_(2).Excessive film forming temperature is not conducive to ozone generation,due to the specific surface area and surface hydroxyl content of the supported silicon dioxide film will be greatly reduced.