降低银纳米线薄膜接触电阻的方法研究

Research of methods to reduce the contact resistance of transparent conductive films based on silver nanowires

银纳米线透明导电薄膜的导电性能主要取决于银纳米线之间的接触电阻,过高的接触电阻会降低透明导电薄膜的光电性能和器件稳定性。针对银纳米线透明导电薄膜接触电阻大的不足,文章综述了使用超长银纳米线、洗涤法、焊接法、机械层压法、加入其他组分导电材料等方法,能够有效降低银纳米线的接触电阻。在不损害银纳米线透明导电薄膜机械性能和透光性能的前提下,综合使用上述方法可以使银纳米线透明导电薄膜获得更好的光电性能。

The conductivity of silver nanowire transparent conductive film mainly depends on the contact resistance between silver nanowires. Too high contact resistance will reduce the photoelectric performance and device stability of transparent conductive film. In view of the large contact resistance of transparent conductive films of silver nanowires,this paper summarizes the methods of using ultra long silver nanowires, washing, welding, mechanical lamination and adding other components of conductive materials, which can effectively reduce the contact resistance of silver nanowires. On the premise of not damaging the mechanical properties and light transmission properties of silver nanowire transparent conductive film, the comprehensive use of the above methods can obtain better photoelectric properties of silver nanowire transparent conductive film.