磁控溅射制备高熵氧化物薄膜的阻挡扩散性能

Diffusion barrier property of high-entropy oxide film prepared by magnetron sputtering

利用磁控溅射在Ni-8at%W合金基体表面沉积(CoCrNiTa)O_(x)高熵氧化物薄膜,研究了它在1000℃、100 h的真空扩散条件下的高温稳定性及其阻挡Ni-30at%Cr涂层与Ni-8at%W合金基体中元素互扩散的性能,采用X射线衍射仪、扫描电子显微镜、能谱仪、纳米压痕仪及划痕仪对薄膜进行研究。结果表明:(CoCrNiTa)O_(x)高熵氧化物薄膜较为致密,为非晶结构。随着溅射时间延长,薄膜纳米硬度上升的趋势很小,但膜基结合力增幅较大。(CoCrNiTa)O_(x)扩散障具有较好的高温稳定性,对Cr元素具有较好的扩散阻挡性能。

A(CoCrNiTa)O_(x) high-entropy oxide film was deposited on Ni-8at%W alloy substrate by magnetron sputtering,and characterized by X-ray diffractometer,scanning electron microscope,energy-dispersive spectrometer,nanoindenter,and scratch test instrument.Its high-temperature stability and performance as a barrier to the interdiffusion of elements between a Ni-30at%Cr coating and the Ni-8at%W alloy substrate under vacuum condition at 1000℃ for 100 hours were studied.The results showed that the(CoCrNiTa)O_(x) high-entropy oxide film was compact and amorphous.The nanohardness of the film was increased slightly with the extending of sputtering time,but the film-to-substrate adhesion was increased greatly.The(CoCrNiTa)O_(x) diffusion barrier was stable at high temperatures and had a good ability to inhibit the diffusion of Cr element.