改善IGBT开关特性的关键技术研究

Research on Key Technologies of Improving IGBT Switching Characteristics

随着近年来IGBT驱动技术的快速发展,其在新能源汽车、国防军事、智能电网等领域的应用越来越广泛。中国制造业发展环境鼓励传统制造业转型升级,带动IGBT的应用需求不断增加,IGBT行业迎来新的发展空间。IGBT智能驱动通过不同的驱动策略,使得IGBT工作在最佳状态。介绍了IGBT在开通和关断阶段的详细变化过程,重点描述了门极电压、集电极电流和集射电压的动态关系,通过单级驱动方式和多级驱动方式说明了改善开关特性的方法和原理。

With the rapid development of IGBT drive technology in recent years, it is widely used in new energy vehicles,national defense and military,smart grid and other fields.The development environment of China ’s manufacturing industry encourages the transformation and upgrading of traditional manufacturing industry,driving the increasing demand for IGBT applications,and the IGBT industry ushers in new development space.IGBT intelligent drive makes IGBT work in the best state through different drive strategies.This paper introduces the detailed change process of IGBT in the turn-on and turn-off stages,and focuses on the dynamic relationship between gate voltage,collector current and collector voltage.The method and principle of improving switching characteristics are explained by single-stage driving mode and multi-stage driving mode.