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二硒化钼/石墨烯垂直异质结的制备与光电性能研究 被引量:1

Preparation and photoelectric properties of MoSe_(2)/graphene vertical heterostructure
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摘要 二维材料由于其原子级厚度和诸多独特物理性质受到了学术界与工业界的广泛关注,其中由石墨烯和过渡金属硫属化合物(TMDCs)堆叠而成的范德华尔斯垂直异质结更是在光电器件领域展现出巨大的应用前景。通过化学气相沉积法制备出高质量石墨烯薄膜和单层二硒化钼,然后采用湿法转移技术将两者转移并堆叠,形成垂直异质结,并采用拉曼光谱(Raman)、光致发光光谱(PL)以及原子力显微镜(AFM)对制备的样品进行表征,最后利用无掩模光刻技术制备光电器件并对其进行光电性能测试。实验结果发现MoSe_(2)/graphene异质结器件与单层MoSe_(2)光电器件相比,光电流和光响应度增强两个数量级以上,显示出该结构对于提升光电探测性能的优越性。 Two-dimensional(2D)materials have received extensive attention due to their atomic-level thickness and excellent physical properties.Moreover,the van der Waals heterostructures stacked by graphene and transition metal dichalcogenides(TMDCs)have shown great potential in the field of optoelectronic devices.Here,chemical vapor deposition(CVD)was used to synthesize high-quality and large-area graphene films and monolayer MoSe_(2),then the wet transfer technique was adopted to stack them to form 2D heterostructures.The prepared MoSe_(2)/graphene vertical heterostructures were characterized by Raman spectroscopy(Raman),photoluminescence spectroscopy(PL),and atomic force microscope(AFM).Finally,MoSe_(2)/graphene devices were fabricated by mask-free photolithography and the performance of the device was characterized.The obtained photoresponsivity is two orders of magnitude higher than that of the device based on bare MoSe_(2) monolayer,showing the great application potential in the field of optoelectronics.
作者 高铭良 缪鑫 徐诗佳 万茜 GAO Mingliang;MIAO Xin;XU Shijia;WAN Xi(Internet of Things Engineering Institute,Department of Electronic Engineering,Jiangnan University,Wuxi 214122,Jiangsu Province,China)
出处 《电子元件与材料》 CAS CSCD 北大核心 2022年第5期449-456,共8页 Electronic Components And Materials
基金 国家自然科学基金青年项目(61804067) 江苏省自然科学基金青年项目(BK20170193) 江苏省“双创博士”资助项目(1256010241180240) 江苏省“六大人才高峰”资助-第十五批(DZXX-021) 中央高校基本科研业务费专项资金资助(JUSRP11746,JUSRP51726B) 江南大学新进人员科研启动基金(1255210322161270)。
关键词 二硒化钼 石墨烯 湿法转移 垂直异质结 光电探测器 MoSe_(2) graphene wet transfer vertical heterostructure photodetector
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