电感耦合等离子体发射光谱法测定粗制氢氧化钴中的硅

Determination of Silicon in Crude Cobalt Hydroxide by Inductively Coupled Plasma Emission Spectrometry

以盐酸溶解粗制氢氧化钴样品,确定在5%盐酸介质中,用电感耦合等离子体发射光谱法测定粗制氢氧化钴中的硅。讨论了试样溶解、测定介质的选择、试样空白的控制、分析谱线的选择和共有元素的干扰等。采用实验方法对实际样品进行硅的测定,结果的相对标准偏差(RSD,N=9)不大于3%,该方法与氟硅酸钾容量法进行对比试验,硅的测定值吻合较好,能满足生产过程中粗制氢氧化钴中硅的测定。

The sample of crude cobalt hydroxide was dissolved in hydrochloric acid,and the silicon in crude cobalt hydroxide was de‐termined by inductively coupled plasma atomic emission spectrometry in 5%hydrochloric acid medium.The dissolution of sample,selection of determination medium,control of blank of sample,selection of spectral line and interference of common elements were discussed.The silicon of actual samples was determined by the experimental method,the relative standard deviation(RSD,n=9)of the results was no more than 3%.The method was compared with the potassium silicofluoride volumetric method.The measured‐values of silicon were in good agreement,which could meet the determination of silicon in crude cobalt hydroxide in the production process.