氧化石墨烯诱导高织构Mo掺杂Bi_(2)Te_(3)薄膜的热电性能

Thermoelectric properties of Mo-doped Bi_(2)Te_(3) films with highly orientation induced by graphene oxide

为提高Bi_(2)Te_(3)薄膜的热电性能,采用磁控溅射技术在旋涂有氧化石墨烯(GO)缓冲层的玻璃衬底上共溅制备的Mo掺杂的n型Bi_(2)Te_(3)薄膜.通过对其形貌、组成及热电特性的表征,研究了(00 l)择优取向的不同Mo溅射功率(P=0,15,25,35,45 W)对Bi_(2)Te_(3)的热电性能的影响.结果表明:GO缓冲层的存在可以实现高度取向(00 l)的Bi_(2)Te_(3)薄膜制备,室温下薄膜迁移率为48 cm^(2)·V^(-1)·s^(-1);Mo掺杂有效提高了Bi_(2)Te_(3)薄膜的载流子浓度,使得P_(Mo)=25 W时的Bi_(2)Te_(3)薄膜在室温下最大电导率为944S·cm^(-1),其在400 K时最大功率因子达到2074.6μW·m^(-1)·K^(-2).表明氧化石墨烯诱导高织构Mo掺杂可以优化n型Bi_(2)Te_(3)薄膜的热电性能.

In order to improve the thermoelectric properties of Bi_(2)Te_(3) films,Mo-doped n-type Bi_(2)Te_(3) films were co-sputtered on a glass substrate coated with graphene oxide(GO)buffer layer by magnetron sputtering technology.By the characterization of its morphology,composition and thermoelectric properties,the effects of Mo sputtering power(P=0,15,25,35,45 W)on the thermoelectric properties of Bi_(2)Te_(3) films with(00 l)were studied.The results showed that the GO buffer layer could lead to a highly(00 l)orientation and enhance the room temperature mobility up to 48 cm^(2)·V^(-1)·s^(-1)in pristine Bi-2Te-3 films.Mo-doped effectively improved the carrier concentration of Bi_(2)Te_(3) films,so that the maximum conductivity at P_(Mo)=25 W reached 944S·cm^(-1),and its maximum power factor reached 2074.6μW·m^(-1)·K^(-2)at room temperature at 400 K.The experimental results showed that GO buffer layer and Mo-doped could effectively improve the thermoelectric properties of n-type Bi_(2)Te_(3) film.