摘要
Achieving high thermoelectric pe rformance in thin fiIm heterostructures is essental for integrated and minlatured ther moelectric device applcations.In this work,we d emonstrate a mechansm and device performance of enh anced themoelectnic perfomance induced by interfuclal effect in a tansitdon metal dichalcogenides SrTiO_(3)(STO)heterpstructure Owing to the fomed conductive interface and elevated conductivity.the ZrTe_(2)/STO he teras tructure presents large thermoelectric power factor of 3.7×10^(5)μWcm^(-1)K^(-2) at 10 K.Fomat ion of quasi-wo dimensional conductance at the interface s atributed for the lage Seebeck coffcent and high electnical conductivity leading to high thermoelectric perfor mance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure This supenior themoelectnic property makes this he teros tructure a promtsing candidate for future thermoelectric device.
基金
We thank support from Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices(GDSTC No.2019B121205001)
International Collaboration project(No.121631KYSB20190026)
The Hong Kong Polytechnic University(Grant Nos.1-ZVSQ,UAEZ)
X.Zhou acknowledges financial support from National Natural Science Foundation of China(NSFC)(Grant No.11674040,11904039)
the Fundamental Research Funds for the Central Universities(Grant no.2018CDQYWL0048,106112017CDJQJ308821 and 2018CDPTCG0001/26)
H.W.acknowledges the support from the National Natural Science Foundation of China(Grant No.12004441,92165204)
the Hundreds of Talents program of Sun Yat-sen University and the Fundamental Research Funds for the Central Universities(No.20lgpy165,202lqntd27).
