低气压射频等离子体的探针诊断方法

Probe diagnostic method for low-pressure radio-frequency plasma

在半导体芯片制造工艺中,约1/3道工序采用等离子体技术,例如材料刻蚀和薄膜沉积等.因此对射频等离子体的基础物理过程的理论和模拟及实验研究具有重要意义.在理解等离子体的复杂物理过程、验证理论模型与数值模拟结果的正确性方面,实验诊断具有重要作用.总结了射频等离子体中常用的探针诊断方法及其最新研究进展,包括朗缪尔探针、双探针、微波共振探针以及磁探针,重点介绍了这些探针的结构、特点及典型的测量结果.

In semiconductor chip manufacturing,about one third of the processes involve plasma technology,such as material etching,thin film deposition,etc.It is of great significance to investigate the fundamental physics in radio-frequency(RF)plasmas by theory,simulations and experiments.Experimental diagnostic plays a key role in understanding of complex physics and verifying the correctness of theoretical model and numerical simulation results.The probes commonly used in RF plasma diagnosis and their latest research progress,including Langmuir probe,double probe,microwave resonance probe and magnetic probe,were summarized.The structures,characteristics and typical measurement results of these probes were introduced emphatically.