全SiC结构高温压力传感器制备及测试

Preparation and Testing of High Temperature Pressure Sensor with Full SiC Structure

面向极端条件下原位压力测量技术的需求,设计了一种光纤法珀式碳化硅(SiC)高温压力传感器。采用全SiC真空法珀(F-P)腔结构,以最大限度发挥SiC材料优异的耐高温特性。通过用反应离子刻蚀和高温高压键合技术成功制备了全SiC式高温压力传感器,实现高温环境下的原位压力测量。实验结果表明,该传感器能够实现650℃高温环境下6 MPa的压力测量。650℃下传感器的光谱压力灵敏度达到4.05 nm/MPa,温度压力交叉灵敏度为1.09×10^(-3)MPa/℃。研究成果为面向高温环境下压力原位测量的传感器开发提供了思路。

In order to meet the needs of in-situ pressure direct measurement technology under extreme conditions, a fiber-optic Fabry-Perot SiC high-temperature pressure sensor is designed.All SiC vacuum Fabry-Perot cavity structure is adopted to maximize the excellent high temperature resistance of SiC material.All SiC high temperature pressure sensor is successfully fabricated by reactive ion etching and high temperature and high pressure bonding technology, and in-situ pressure measurement in high temperature environment is realized.The experimental results show that the sensor can measure the pressure of 6 MPa at 650 ℃.The spectral pressure sensitivity of the sensor reaches 4.05 nm/MPa at 650 ℃,and the temperature-pressure cross sensitivity is 1.09×10^(-3)MPa/℃.The results can provide suggestions for the design of sensors for in-situ pressure measurement in high temperature environment.