WS_(2)量子点负载In_(2)O_(3)气体传感器制备和气敏特性研究

Fabrication and gas sensitive performance of WS_(2) quantum dots loaded In_(2)O_(3) based gas sensor

利用液相超声法制备了硫化钨(WS_(2))量子点,并将其负载于中空微管状氧化铟(In_(2)O_(3))结构。采用扫描电子显微镜(SEM)对制备的材料表面形貌进行了表征,结果表明:WS_(2)量子点负载于In_(2)O_(3)表面。同时,制备出纯In_(2)O_(3)、WS_(2)量子点修饰In_(2)O_(3)(WS_(2)@In_(2)O_(3))两种气体传感器,在室温下研究了其对NO_(2)的气敏性能。气敏特性实验表明:WS_(2)量子点的修饰能够显著提升In_(2)O_(3)对NO_(2)的气敏性能,当检测NO_(2)体积分数为50×10^(-6)时,摩尔分数为3%WS_(2)@In_(2)O_(3)在室温下的响应高达722.30,是相同条件下In_(2)O_(3)(195.72)的7.39倍;同时,WS_(2)量子点的修饰大幅度缩短了In_(2)O_(3)传感器的响应恢复时间。此外,所制备的传感器在选择性、重复性、长期稳定性方面皆表现出良好的性能。

Liquid-phase ultrasonic method is used to prepare WS_(2)quantum dots;and WS_(2)quantum dots are loaded on hollow microtubular indium oxide(In_(2)O_(3)).The surface morphology of the prepared material is characterized by scanning electron microscope(SEM).The experimental results show that the WS_(2)quantum dots are successfully loaded on the surface of In_(2)O_(3).At the same time,two kinds of gas sensors,which are pure In_(2)O_(3)and WS_(2)modified In_(2)O_(3)are prepared.And the gas sensitivity of WS_(2)nanomaterial to NO_(2)at room temperature is researched.The experimental results indicte the modification of WS_(2)quantum dots can significantly improve the gas sensitivity of In_(2)O_(3)to NO_(2).The response of gas sensor based on 3 mol%WS_(2)@In_(2)O_(3)can reach 722.30 to volume fraction of 50×10^(-6)NO_(2),which is about 7.39 times for In_(2)O_(3)of 195.72 in the same condition.At the same time,the modification of WS_(2)quantum dots greatly reduces the response and recovery time of In_(2)O_(3)sensor.In addition,the fabricated sensor show good properties in selectivity,repeatability,and long-term stability.