摘要
Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(3)(BFO)thin film as the functional layer.The inorganic single crystalline FTJs grown on rigid perovskite substrates at high temperatures are integrated with the flexible plastic substrates,by using the water-soluble Sr_(3)Al_(2)O_(6)(SAO)as the sacrificial layer and the following transfer.The transferred freestanding BFO thin film exhibits excellent ferroelectric properties.Moreover,the memristive properties and the brain-like synaptic learning performance of the flexible FTJs are investigated.The results show that multilevel resistance states were maintained well of the flexible artificial synapse,together with their stable synaptic learning properties.Our work indicates the promising opportunity of ferroelectric thin film based flexible synapse used in the future neuromorphic computing system.
基金
the National Natural Science Foundation of China(No.62004056)
the Hundred Persons Plan of Hebei Province(Nos.E2018050004 and E2018050003)
This work was also supported by National Natural Science Foundation of China(Nos.61674050 and 61874158)
the Outstanding Youth Project of Hebei Province(No.F2016201220)
the Project of Distinguished Young of Hebei Province(No.A2018201231)
he Support Program for the Top Young Talents of Hebei Province(No.70280011807)
the Training and Introduction of High-level Innovative Talents of Hebei University(No.801260201300)
the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018).
