氮化镓基共振隧穿二极管中极化效应的研究

Study of polarization effect in gallium nitride-based resonant tunneling diode

目的 理论分析极化效应对用于太赫兹波段的氮化镓(GaN)基共振隧穿二极管(RTD)器件特性的影响。方法 通过半导体工艺以及器件模拟工具对GaN基RTD器件进行建模,在此模型的基础上对器件展开详尽的理论分析,从微观机理上揭示极化效应对器件输出特性的影响。结果 提取的存在极化效应的RTD器件的输出特性曲线显示出明显的非反对称性。结论 极化效应是影响器件输出特性的关键因素之一,因此器件性能的提升必须以弱化极化效应为目标。

Purposes—To analyse theoretically the influence of polarization effect on the characteristics of gallium nitride(GaN)-based resonant tunneling diode(RTD)used in terahertz band.Methods—The GaN-based RTD device is modeled by semiconductor process and device simulation tool.Based on this model,the device is theoretically analysed in detail to reveal the influence of polarization effect on the output characteristics of the device from the microscopic mechanism.Results—The output characteristic curves of RTD devices with polarization effect show obvious non-antisymmetry.Conclusions—Polarization effect is one of the key factors affecting the output characteristics of devices,so,the performance of the device can be improved only through weakening the polarization effect.