Nanoscale Impact Ionization and Electroluminescence in a Biased Scanning-Tunneling-Microscope Junction

Electroluminescence from a p-type Ga As(110)surface was induced by tunneling electrons in a scanning tunneling microscope under both polarities of bias voltage.The optical spectra exhibit a polarity-independent luminescence peak at 1.47 eV resulting from the exciton recombination.However,the quantum yield of photon emission at negative bias voltage is two orders of magnitude weaker than that at positive bias voltage.Moreover,the luminescence at negative bias voltage shows the linear dependence of bias voltage,distinct from the rapid rise due to resonant electron injection at positive bias.Furthermore,the threshold bias voltage for electroluminescence at negative bias is nearly twice the bandgap of Ga As,not simply satisfying the energy conservation for the creation of an electron–hole pair.Through theoretical calculation,we propose an impact ionization model to nicely explain the newly observed electroluminescence at negative bias voltage.We believe that this mechanism of impact ionization could be readily applied to other nanoscale optoelectronics including 2D semiconductors and 1D nanostructures.