基于介质工程研制高性能黑磷顶栅器件

Fabrication and Research of High-Performance Black Phosphorus Top Gate Device Based on Dielectric Engineering

在这个工作中,作者通过电子束沉积二氧化铪(HfO;)作为栅介质,并沉积1nm锡(Sn)作为生长HfO;的缓冲层,获得了场效应迁移率超过100cm;V;s;的黑磷(BP)顶栅场效应晶体管(TG-FETs)。通过测试BP TG-FETs在不同漏源电压下的转移特性曲线,发现了漏极偏压会引起栅控效应。进一步地,在较小电压下探究了BP TG-FETs不同沟道长度的源漏电流饱和情况,这可用于BP射频器件的研究。最后,对BP顶栅器件的量子电容进行了相关研究,从测量的C-V曲线和转移特性曲线中直接提取并计算出栅介质氧化物电容和BP量子电容,此过程无需再引入任何其他拟合参数,BP量子电容的测量也为探索BP的态密度和电子器件可压缩性提供了重要依据。

By electron beam deposition of 1 nm Sn as a buffer layer and deposition of hafnium dioxide(HfO;)as the gate dielectric of black phosphorus(BP) top-gate devices(TG-FETs), the mobility of the prepared BP TGFETs can reach more than 100 cm~2V;s;. By testing transfer characteristic curves of the BP TG-FETs under different drain bias voltages, it is found that the drain bias voltage causes the gate control effect. Furthermore, the sourcedrain current saturation of BP top-gate TG-FETs with different channel lengths under a small voltage is explored,which can be used to study BP radio frequency devices. Finally, the quantum capacitance of the BP TG-FET was studied. The oxide layer capacitance and BP quantum capacitance were directly calculated from the measured CV curves and the transfer characteristic curves without introducing any other fitting parameters. The measurement of BP quantum capacitance also provides an important basis for exploring the density of states of BP and the compressibility of BP electronic devices.