先进光刻技术的发展历程与最新进展

Evolution and Updates of Advanced Photolithography Technology

光刻技术是半导体集成电路技术发展的主要推动技术,其不断提高的分辨率与图形复制精度成功地将集成电路制造线宽从40多年前的2~3μm缩小到先进的10~15 nm。在发展过程中,众多先进的技术不断涌现,如投影式光刻、相移掩模版、化学放大型光刻胶、光学邻近效应修正等,及时确保了摩尔法则按时向前推进。以投影光刻发展的历史为主线,从0.25μm到当今的5 nm再到未来的先进技术节点,对每个关键的技术节点的工艺要求与工艺窗口进行分析,包括采用的新技术及其作用,以展示光刻工艺与相关技术的整体面貌,给读者专业技术的参考。

Photolithography has been the main driving force for the sustained development of semiconductor integrated circuit technology.Its continuously improved resolution and pattern reproduction accuracy have successfully reduced the manufacturing linewidth of integrated circuit from 2~3μm more than 40 years ago to the current 10~15 nm.During the course of its evolution,many advanced technologies continue to emerge,such as projection lithography,phase-shifting mask,chemically amplified photoresist,and optical proximity effect correction,which timely ensure the advancement of integrated circuit technology along the prediction of the Moore’s law.This paper uses the history of projection lithography as the clue,from 0.25μm to today’s 5 nm,to analyze the process requirements and process window of each key technology node,including the added technologies and their respective roles,so as to provide a comprehensive presentation of the photolithography process and related technologies with the purpose to give the readers a professional and technical reference.