EUV光刻三维掩模成像研究进展

Research Progress on the Imaging of Three-Dimensional Mask for Extreme Ultraviolet Lithography

极紫外(EUV)光刻是目前最先进的光刻技术,是芯片向更高集成度发展的重要保障。高成像质量是确保EUV光刻机性能指标的前提,而反射式三维掩模和特殊的光学成像系统给提高成像质量带来了更多挑战。研究三维掩模成像是提高EUV光刻成像质量的基础,三维掩模成像模型是重要的研究工具。本文结合本团队在EUV光刻三维掩模成像领域的研究,介绍了EUV光刻三维掩模成像的基本原理,总结了典型的三维掩模模型,介绍了提高EUV光刻三维掩模成像质量相关技术的研究进展,并展望了该领域的发展趋势。

Extreme ultraviolet(EUV)lithography is the most advanced lithography technology,and guarantees the development of the chip to higher integration degree.High imaging quality is the premise to ensure the performance of the EUV lithography system,while the reflective three-dimensional(3D)mask and the special imaging optics bring more challenges in improving the imaging quality of EUV lithography.The research of the imaging of 3D mask is the basis to improve the imaging quality,and the 3D mask imaging model is an important research tool.In this paper,combined with the research work of our group,the principle of the imaging of 3D mask for EUV lithography is briefly introduced and the typical 3D mask models are reviewed.Then the researches on the imaging quality of 3D mask for EUV lithography are introduced.Finally,the research tendency of this field is prospected.