漏电低短路能力强的3300V IGBT模块

3300 V IGBT Modules with Low Leakage Current and Strong SC Capability

为实现满足电网应用要求的短路能力强、反向偏置安全工作区大、工作结温高的3300 V高压绝缘栅场效应晶体管模块,提出了一种具有N型增强层的IGBT元胞结构,采用P型隔离区的元胞布局结构和台阶形场板的保护环结构的IGBT设计。基于203.2 mm(8英寸)平面栅IGBT加工工艺,制作出的芯片封装成3300 V/1500 A的IGBT模块。模块常温下的饱和压降(VCEsat)为2.55 V,动态总损耗(Etot)为5236 mJ;高温150℃下的VCEsat为3.3 V,集电极和发射极间的漏电流(ICES)只有38 mA,Etot为7157 mJ。在常温时,当栅极和发射极电压(VGE)为18.5 V的条件下,模块通过了一类短路测试。在150℃下,模块通过了2.5倍额定电流的反向偏置关断测试。

To meet the application requirement of 3300 V IGBT modules with strong short cir-cuit(SC)capability,wide reverse bias safe operation area(RBSOA)and high operation junction tem-perature in power grids,a kind of IGBT design composed of the cell structure with N type enhanced layer,the cell layout with P type isolation region and the guard ring structure with stepped electric field plates was proposed.By adopting 8-inch planar gate IGBT process,IGBT chips were fabricated and packaged to 3300 V/1500 A modules.The collector-emitter saturation voltage(VCEsat)is about 2.55 V and the total dynamic loss(Etot)is 5236 mJ at room temperature;the VCEsat is about 3.3 V,the collector-emitter leakage current(ICES)is only about 38 mA and the Etot is 7157 mJ at the tempera-ture of 150℃.The modules pass the type I short circuit test when the gate-emitter voltage(VGE)is 18.5 V at room temperature and pass the RBSOA test when the collector-emitter current(ICE)is 2.5 times the normal current at the temperature of 150℃.