单层二硫化钨的气相制备与研究

Gas Phase Preparation and Study of Monolayer of Tungsten Disulphide

单层二硫化钨(WS_(2))具有约2.0e V的直接带隙,还具有优异的光电性能,是二维(2D)纳米光电子器件和光电传感器领域的重点研究对象,但晶体质量较高的单层WS_(2)的气相生长仍然具有研究价值。在此,我们提出了一种以WO_(3)为前驱体,生长单层WS_(2)纳米片的CVD方法。采用AFM、Raman和OM进行表征,测试结果证明,生长的WS_(2)薄片具有高质量的晶体结构。精确控制WO_(3)前驱体的量,可为CVD生长高质量的WS_(2)纳米片提供一种新的思路。

Monolayers of tungsten disulfide(WS_(2)) had a direct bandgap of about 2.0eV and excellent photoelectric properties.WS_(2)was a key research object in the field of two-dimensional(2D) nano-optoelectronic devices and photoelectric sensors.However,the gasphase growth of WS_(2 )monolayer with highe rcrystal quality was still significant.Here,a CVD method for monolayer WS_(2)nanosheets growing with WO_(3 )asprecursor was proposed.Through AFM,Raman and OM characterization,the test results showed that the WS_(2 )thin slices had high quality crystal structure.Accurate control of WO_(3 )precursors provided a new idea for CVD growth of WS_(2 )nanosheets with high quality.