摘要
对宽带有源巴伦电路结构进行了研究,基于0.13μm GaAs pHEMT工艺,采用电磁仿真软件设计一款2 GHz~18 GHz单片集成宽带有源巴伦芯片。经过流片加工及装配测试,有源巴伦芯片在2 GHz~18 GHz工作频段范围,输入到两输出端小信号增益分别为3.0 dB~3.5 dB、3.5 dB~4.7 dB,两输出端口幅度差≤1.2 dB,相位差180±5°以内,输出P1 dB功率值大于4 dBm,直流功耗约5 V/50 mA。芯片尺寸为1.4 mm×1.9 mm×0.07 mm。实测与仿真结果具有一定的一致性。
This paper researches the broadband active balun circuit structure.Based on 0.13μm GaAs pHEMT process,a 2 GHz~18 GHz monolithic integration broadband active balun chip is designed by adopting electromagnetic simulation software.After flow chip processing and assembly testing,the active baron chip operates in the frequency band range of 2 GHz~18 GHz,the small signal gain of the input to the two outputs is 3.0 dB~3.5 dB and 3.5 dB~4.7 dB respectively.The amplitude difference between the two output ports is less than or equal to 1.2 dB and phase difference is less than 180±5°.The output P1dB power value is greater than 4 dBm,and the DC power consumption is about 5 V/50 mA.The chip size is 1.4 mm×1.9 mm×0.07 mm.There is certain consistency between the measured and simulation result.
作者
杨楠
杨旭达
YANG Nan;YANG Xuda(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
出处
《现代信息科技》
2022年第6期58-61,共4页
Modern Information Technology
关键词
单片集成
有源巴伦
幅度差
相位差
monolithic integration
active balun
amplitude difference
phase difference