利用变温霍尔效应计算N型Ge的杂质电离能和禁带宽度

Calculation of the ionization energy and band gap of N-type Ge by temperature-dependent Hall effect

通过变温霍尔效应实验,在77~420K温度范围内对N型Ge标准样品的电学特性进行测量.根据对高温本征导电区斜率的计算,得到样品禁带宽度E_(g);对低温杂质电离区斜率的计算,得到样品杂质电离能E_(i).对计算结果进行比较,■及■曲线更适合用于计算禁带宽度;降温的■曲线更适合用于计算杂质电离能.

Through the experiments of temperature-dependent Hall effect,the electrical characteristic of a N-type Ge sample was measured within a temperature range of 77~420K.The sample band gap width E_(g) was obtained according to the calculation of the slope of data curves in high-temperature intrinsic conductive region,and the ionization energy impurity E_(i) according to that in low-temperature impurity ionization region.It could be concluded that■and■curves were suitable for calculating E_(g) and cooling■curve was suitable for calculating E_(i).