碳黑掺杂氧化石墨烯基阻变存储器的制备及其特性研究

Study on the preparation and characteristics of carbon black doped GO-based resistive switching memory

阻变存储器的电阻转变稳定性和耐擦写次数是其商业化应用的重要指标.采用氧化石墨烯(GO)作为阻变存储器中间介质层,制备了Al/GO/ITO器件,分析了其阻变机制,该器件开启关闭电压、高低电阻值相对波动率较大.针对该问题,采用在GO中掺杂碳黑以及紫外光辐照的方法,在GO内部构筑局域化电场来控制材料内部的氧分布.实验结果表明:在阻变层GO中掺杂一定质量分数的碳黑能降低器件波动性,此外,随着碳黑掺杂质量分数的提高,器件运行状态由突变向缓变转变;紫外光热转化导致导电细丝易断裂,掺杂后加光辐照器件保留了一定的柔性特性.

Stability and endurance for resistive switching memory are important for commercial application.The Al/GO/ITO devices were fabricated using graphene oxide(GO)as the resistive switching insulating layer of the resistive memory,and resistive switching mechanism was analysed.However,the turn-on/turn-off voltage and the high/low resistance of this device fluctuated widely.To address this issue,the construction of local electric field inside the GO layer for controlling the oxygen distribution was investigated by doping carbon black in GO and ultraviolet irradiation.The results showed that the doping of carbon black with a certain concentration in the GO resistive layer could reduce the device volatility and change the device resistance from abrupt to gradual change with increasing the doping concentration.The ultraviolet thermal transformation caused the conductive filaments to break easily,and the prepared devices preserved the flexible characteristics.