摘要
Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor(SFET),which has the potential for combining the data storage and process in a single device.Here we report the spin dependent transport on a Fe_(3)O_(4)/GaAs based lateral structured device.Parallel and antiparallel states of two Fe_(3)O_(4) electrodes are achieved.A clear MR loop shows the perfect butterfly shape at room temperature,of which the intensity decreases with the reducing current,showing the strong bias dependence.Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.
作者
Zhaocong Huang
Wenqing Liu
Jian Liang
Qingjie Guo
Ya Zhai
Yongbing Xu
黄兆聪;刘文卿;梁健;郭庆杰;翟亚;徐永兵(School of Physics,Southeast University,Nanjing 211189,China;Spintronics and Nanodevice Laboratory,Department of Electronics,University of York,York YO105DD,United Kingdom;York-Nanjing Joint Center in Spintronics,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;Department of Electronic Engineering,Royal Holloway University of London,Egham,Surrey TW200EX,United Kingdom)
基金
supported by the National Key Research and Development Program of China(Grant No.2017YFA0204800)
the National Natural Science Foundation of China(Grant Nos.52071079 and 11504047)。
