p-on-n长波、甚长波碲镉汞红外焦平面器件技术研究

Research on p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors technology

As注入掺杂的p-on-n结构器件具有暗电流小、R_(0)A值高、少子寿命长等优点,是长波、甚长波碲镉汞红外焦平面器件发展的重要趋势。介绍了由昆明物理研究所研究制备的77 K温度下截止波长为9.5μm、10.1μm和71 K下14.97μm的p-on-n长波、甚长波碲镉汞红外焦平面器件,对器件的响应率、NETD、暗电流及R_(0)A等性能参数进行测试分析。测试结果表明,器件的有效像元率在99.78%~99.9%之间,器件的NETD均小于21 mK。实现了p-on-n长波、甚长波碲镉汞红外焦平面器件的有效制备。

The p-on-n structure doped with As implantation has the advantages of low dark current,high R_(0)A product,and long minority carrier lifetime,which is an important trend in the development of long-wavelength and very longwavelength HgCdTe infrared focal plane detectors.P-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors with cut-off wavelength of 9.5μm and 10.1μm at 77 K and 14.97μm at 71 K fabricated by Kunming Institute of Physics are introduced.Test and analyze performance parameters such as the responsivity,NETD,dark current and R_(0)A of the detectors.The test results show that the operability of the detectors is between 99.78%and 99.9%,and the NETD of the detectors is less than 21 mK.The effective fabrication of p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors is realized.