基于富铟团簇量子结构的双波长可调谐半导体激光器

Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure

提出了一种采用增益芯片和光栅外腔的双波长可调谐半导体激光器。增益芯片采用了富铟团簇量子限制结构作为其量子限制结构,由于该结构独特的平顶增益特性,可以使激光器在双波长调谐范围内实现光强稳定。本研究中的谐振腔包括内部谐振腔和外部谐振腔,其中内部谐振腔由增益芯片的两个自然解理面构成,以支撑整个系统工作在特定波长。外部谐振腔由增益芯片的一个自然解理面和光栅构成,可实现969.1~977.9 nm的工作波长范围。最终该系统基于单个增益芯片和单个光栅实现了同步双波长输出,双波长的频率差在THz范围。本研究有望为实现双波长差频太赫兹源提供一种可能的解决方案。

We design and fabricate a double-wavelength tunable laser with a single grating structure using a singlegain chip.The gain chip adopts an indium-rich cluster quantum constraint structure,which can generate ultrawide flat-top gain.The flat-top gain is the basis for producing a dual-wavelength laser with the same intensity.A grating is inserted into the exterior of the gain chip so that its resonator is composed of internal and external cavities.The internal cavity consists of two natural cleavage planes of the gain chip for oscillating the output laser at a fixed wavelength(974 nm).The tunable external cavity consists of a natural cleavage plane and a grating for the output laser at a tunable wavelength(969.1~977.9 nm).The laser structures of the single-gain chip and single grating can produce synchronous dual-wavelength output,which avoids a complicated optical path design.The frequency difference between the two wavelengths is in the terahertz band.Thus,the laser can be used as a dualwavelength laser source to generate terahertz radiation.