InAs/InAsSb超晶格红外中/中波双色焦平面探测器研制

Dual-color mid-mid-wavelength infrared InAs/InAsSb superlattice focal plane arrays

超晶格材料已经成为了第三代红外焦平面探测器的优选材料。双波段红外探测器能够通过对比两个波段内的光谱信息差异,对复杂的背景进行抑制,提高探测效果,在需求中尤为重要。本文开展了InAs/InAsSb超晶格中/中双色焦平面探测器设计及制备技术研究,从器件设计、材料外延、芯片加工等方面展开研究,制备了中心距30μm的320×256 InAs/InAsSb二类超晶格中/中波双色焦平面探测器。器件短中波峰值探测率达到7.2×10^(11)cm·Hz^(1/2)W^(-1),中波峰值探测率为6.7×10^(11)cm·Hz^(1/2)W^(-1),短中波有效像元率为99.51%,中波为99.13%,获得了高质量的成像效果,实现中中双色探测。

Superlattice materials have become the preferred materials for the third-generation infrared focal plane detectors.The dual-band infrared detector can suppress the complex background and improve the detection effect by comparing the spectral information difference in the two bands,which is particularly important in demand.In this paper,it reports research results of 320×256 dual-color mid-mid-wavelength infrared InAs/InAsSb superlattice focal plane arrays.The detector structure is NBN epitaxial multilayer and the signal is read out by sequential mode.The pixel center distance from the detector is 30μm.At 77 K measurement,the SMW detector has a peak detectivity of 7.2×10^(11)cm·Hz^(1/2)W^(-1) and dead pixels rate of 0.49%.The MW detector has a peak detectivity of 6.7×10^(11)cm·Hz^(1/2)W^(-1) and dead pixels rate of 0.87%.Infrared images of both wavebands have been taken well-infrared imaging test by adjusting devices voltage bias.