掺杂聚乙烯咔唑绿光磷化铟量子点发光二极管

Green InP Quantum Dot Light-emitting Diode with PVK Blend in Emitting Layer

设计了空穴传输材料聚乙烯基咔唑(PVK)与绿光无镉磷化铟(InP)量子点共混体系,改善了量子点团聚效应,减少了量子点之间相互作用产生的非辐射Förster能量转移(FRET),提高了共混无镉量子点薄膜的光致发光效率(PLQY),从24.2%提升至30.1%。同时,PVK的掺入提高了共混发光薄膜的空穴传输性能,改善了量子点电致发光器件的载流子平衡,使器件的最大外量子效率(EQE)达到5.94%,较未掺杂器件提高了32%。该聚合物掺杂方法可为研制高性能绿光InP量子点发光二极管提供参考。

A hybrid system of polyvinylcarbazole(PVK)and green indium phosphide(InP)quan⁃tum dots was designed to produce efficient light-emitting diodes(LEDs).PVK functions as not only disperse quantum dots well and reduce agglomeration,but also significantly reduce non-radiative Förster energy transfer(FRET)among quantum dots,and improve the film’s photoluminescence ef⁃ficiency(PLQY)from 24.2%to 30.1%.Meanwhile,the incorporation of PVK can improve the hole transport performance of the QD film via the carrier balance of the devices,making the maximum ex⁃ternal quantum efficiency(EQE)of the devices reach 5.94%,which is 32%higher than that of the devices without PVK.This method can provide a reference for the development of high performance green InP QD-LEDs.