In_(2)Se_(3)纳米片改性的GO/WS_(2)/Mg-ZnO复合材料光催化性能的研究

In_(2)Se_(3) Sheets as Photosensitizers to Enhance the Photocatalytic Performance of Graphene Oxide/WS_(2)/Mg-doped ZnO Composite under Natural Sunlight

二维纳米材料由于其结构和性能的独特性受到广泛的关注,各类二维纳米材料合成方法和表面改性的研究也得到了快速发展,在光催化性能提升和能源环境领域等方面发挥着重要作用。本文通过在复合物GO/WS;/MgZnO(rGOWMZ)中添加直接带隙半导体In_(2)Se_(3)纳米片,合成rGOWMZ+In_(2)Se_(3)复合材料。并研究其光催化性能,发现性能得到了明显的改善,其中In_(2)Se_(3)纳米片质量分数为0.5%经过600℃热处理的复合物,在自然光照射下对罗丹明B的降解率为99.6%。本报道中In_(2)Se_(3)纳米片是通过液相超声剥离法制备的,大小为100 nm,厚度约为5层。并采用透射电子显微镜、原子力显微镜、X射线衍射仪、扫描电子显微镜对复合材料进行了物相分析。发现rGOWMZ+In_(2)Se_(3)复合材料对有机颜料罗丹明B具有优异的光催化性能,此复合材料将在光催化领域中具有巨大的应用潜力。

With the development of photocatalytic technology, the research and exploration of photocatalytic properties of 2D materials have also attracted much attention. The photocatalytic performance of graphene oxide/WS;/Mg-doped ZnO(rGOWMZ) composites under 600 ℃ annealing is excellent because the degradation rate of Rhodamine B(Rh B) is 99.6% under natural light, with the added 0.5% amount of In_(2)Se_(3) sheets which is a direct bandgap semiconductor. The In_(2)Se_(3) sheets prepared through liquid exfoliation are about 100 nm and ~5atomic layers thickness. The composites are carried out with Transmission electron microscope(TEM), Atomic force microscope(AFM), X-ray diffraction(XRD), and Scanning electron microscope(SEM). And the r GOWMZ+In_(2)Se_(3) composites exhibit excellent photocatalytic property, showing great potential in photocatalyst application.